通过硅烷偶联剂在硅和铟锡氧化物(ITO)表面嫁接寡聚芴分子  

Covalent Attachment of Oligofluorenes onto Si and Indium Tin Oxide(ITO) Substrates by Grafting with Organosilanes

作　　者：段瑜[1] 温贵安[1] 许国勤[2] 黄维[3] 

机构地区：[1]复旦大学先进材料研究院,上海200433 [2]新加坡国立大学化学系 [3]江苏省有机电子与平板显示重点实验室南京邮电大学信息材料与纳米技术研究院,南京210003

出　　处：《无机化学学报》2008年第10期1596-1603,共8页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.60325412,90406021,30425020,50428303)资助项目。

摘　　要：通过硅烷偶联剂γ-氨丙基三乙氧基硅烷(3-aminopropyl-triethoxysilane,APTES)的"分子桥梁"作用,采用两种不同的方法,把修饰后的寡聚芴分子键联到硅表面和铟锡氧化物(ITO)表面上。X射线光电子能谱(XPS)、原子力显微镜(AFM)和循环伏安(CV)方法等的表征证实了通过硅烷偶联剂在硅表面和ITO表面嫁接寡聚芴分子可行性。Two methods of introducing organosilane are presented. The organos link oligofluorenes onto silicon and ITO ray photoelectron spectroscopy （XPS）, oligofluorenes onto Si and indium tin oxides（ITO） substrates by grafting with ilane, 3-aminopropyltriethoxysilane（APTES）, was used as molecular bridge to substrates. Such substrate-based oligofluorenes films were investigated by X-AFM, and electrochemical analysis. All results prove that oligofluorenes immobilization on silicon and ITO substrates through orgaosilane molecular bridge is feasible.

关 键 词：硅 铟锡氧化物 硅烷偶联剂 寡聚芴分子 嫁接 

分 类 号：O613.72[理学—无机化学]