毫米波单片有源混频器的研制  

DESIGN AND IMPLEMENTATION OF A MILLIMETER WAVE ACTIVE MIXER MMIC

作　　者：严蘋蘋[1] 洪伟[1] 陈继新[1] 

机构地区：[1]东南大学信息科学与工程学院毫米波国家重点实验室,江苏南京210096

出　　处：《红外与毫米波学报》2008年第5期333-336,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金委创新群体基金(60621002);国家863项目资助(2007AA01Z2B4)

摘　　要：采用OMM IC 0.18μm GaAs pHEMT工艺,研制了毫米波单片有源混频器.该混频器选用单栅极单端FET混频结构.在中频输出端设计了低通滤波器,以提高LO-IF、RF-IF的隔离度.芯片的尺寸仅为0.95mm×1.85mm.在射频频率为39GHz、输出中频频率为3GHz时,该混频器的变频增益为0.6dB,LO-IF隔离度大于55dB,RF-IF的隔离度大于30dB.A millimeter wave active mixer MMIC was designed and implemented by using OMMIC 0. 18μm GaAs pHEMT process. Single-gate single-ended FET structure was employed in mixer design. A low-pass filter was designed to improve the LO-IF isolation and RF-IF isolation. The chip size is only 0. 95mm × 1.85mm. The measured conversion gain is 0.6dB at 39GHz RF frequency and 3GHz output IF frequency. The measured LO-IF isolation is above 55dB and RF-IF isolation is above 30dB.

关 键 词：混频器 砷化镓 毫米波 变频增益 隔离度 

分 类 号：TN773.4[电子电信—电路与系统]