红外焦平面CMOS读出电路TDI功能的测试方法研究  

STUDY ON TEST METHOD OF TDI FUNCTION FOR INFRARED FOCAL PLANE ARRAY CMOS READOUT CIRCUITS

作　　者：陈中建[1] 鲁文高[1] 唐矩[1] 张雅聪[1] 吉利久[1] 

机构地区：[1]北京大学微电子学系,北京100871

出　　处：《红外与毫米波学报》2008年第5期342-345,400,共5页Journal of Infrared and Millimeter Waves

基　　金：国防预研计划项目(41308020102)

摘　　要：给出了一种新颖的红外焦平面CMOS读出电路TDI功能的测试方法.该方法通过在电测试MOS场效应晶体管栅极施加不同波形的方波激励信号,观察输出电压波形的对应变化,验证TDI功能的信号延迟和累加操作是否正确.应用该方法实际测试了一款TDI型红外焦平面CMOS读出电路,各种激励模式下测试得到的输出波形均与预计的理想输出波形吻合,证明该测试方法可行,且简单、直观、有普适性.A novel test method of time delay integration（TDI） function for infrared focal plane array CMOS readout circuits was proposed. Different square wave stimulation signals were applied to the gate of electronic test MOSFET and output signail waveforms varied accordingly. Whether the signal delay and accumulation operation of TDI function were correct was verified by comparing the correspondence variation between the test output waveforms and the ideal output waveforms. A TDI CMOS readout circuit was tested by using this method. Our results show that output waveforms are coincident with the ideal output waveforms for all test patterns. This proves that the test method is feasible, simple and generally available.

关 键 词：时间延迟积分 测试方法 读出电路 红外焦平面 

分 类 号：TN407[电子电信—微电子学与固体电子学]