微腔结构顶发射有机白光器件  

Top-emitting white organic light-emitting devices based on microcavity structure

作　　者：吴丰民[1] 孟彦龙[1] 谢国华[1] 陈平[1] 赵毅[1] 

机构地区：[1]集成光电子学国家重点联合实验室吉林大学实验区,吉林大学电子科学与工程学院,吉林长春130012

出　　处：《光电子．激光》2008年第10期1287-1290,共4页Journal of Optoelectronics·Laser

基　　金：国家重点基础研究计划“973”资助项目(2003CB314703)

摘　　要：结合微腔效应,通过调节不同发光层的厚度制作了顶发射有机白光器件。器件结构为Si/Ag/Ag2O/m-MTDATA/NPB/DPVBi/DCJTB:Alq3/Alq3/LiF/Al/Ag,其中DPVBi,DCJTB与Alq3的掺杂层分别作为蓝光和红光发光层,在选定490 nm的谐振波长时,通过调节DPVBi和掺杂层的厚度来实现对器件发光色度的调节。当DPVBi厚度为1 nm,电压为9 V时,器件的色坐标为(0.33,0.34),非常接近白光等能点。此项工作为利用微腔效应制作高效率高亮度顶发射白光器件奠定了基础。Top emitting white organic light emitting devices （TWOLEDs） based on microcavity effect are fabricated through adjusting the thickness of different emitting layers. The structure of the device is Si/Ag/Ag2 O/m-MTDATA/NPB/DPV- Bi/DCJTB：Alq3/Alq3/LiF/Al/Ag,wbere DPVBi and the layer of Alq3 doped with DCJTB are employed as blue emitting layer and red emitting layer,respectively. Chroma for the device is adjusted by choosing different thickness for DPVBi layer and the doped layer when a resonant wavelength of 490 nm was fixed. The CIE coordination of （0. 33,0. 34） of device is acquired with 1 nm-thick DPVBi under 9 V,which is very close to equal power point with CIE coordinates of （0. 33,0.33）.

关 键 词：微腔 顶发射 白光 有机电致发光器件 

分 类 号：TN383.1[电子电信—物理电子学]