Nondoped-type White Organic Light-Emitting Diode Using Star-Shaped Hexafluorenylbenzene as an Energy Transfer Layer  

作　　者：Jun-sheng Yu Tao Ma Shuang-ling Lou Ya-dong Jiang Qing Zhang 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 510054, China [2]Department of Polymer Science, School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, Shanghai 200240, China

出　　处：《Chinese Journal of Chemical Physics》2008年第5期500-504,共5页化学物理学报（英文）

基　　金：This work was supported by the National Natural Science Foundation of China （No.60425101 and No.20674049）, the Program for New Century Excellent Talents in University （No.NCET-06-0812）, and the Young Talent Project at University of Electronic Science and Technology of China （No.060206）.

摘　　要：White organic light-emitting diodes （WOLEDs） with a structure of indium-tin-oxide （ITO）/N,N＇-bis- （1-naphthyl）-N,N＇-diphenyl- （1, 1＇-biphenyl）-4,4＇-diamine （NPB）/1,2,3,4,5,6-hexakis（9,9-diethyl-9H-fluoren-2- yl）benzene （HKEthFLYPh）/5,6,11,12-tetraphenylnaphtacene （rubrene）/tris（8-hydroxyquinoline） aluminum （Alq3）/Mg：Ag were fabricated by vacuum deposition method, in which a novel star-shaped hexafluorenyl- benzene HKEthFLYPh was used as an energy transfer layer, and an ultrathin layer of rubrene was inserted between HKEthFLYPh and Alq3 layers as a yellow light-emitting layer instead of using a time-consuming doping process. A fairly pure WOLED with Commissions Internationale De L＇Eclairage （CIE） coordinates of （0.32, 0.33） was obtained when the thickness of rubrene was 0.3 nm, and the spectrum was insensitive to the applied voltage. The device yielded a maximum luminance of 4816 cd/m2 at 18 V.

关 键 词：White organic light-emitting diode diethyl-9H-fluoren-2-yl）benzene Energy transfer Star-shaped hexafluorenylbenzene 1 2 3 4 5 6-hexakis（9 9- Ultrathin layer 

分 类 号：X703[环境科学与工程—环境工程] TN312.8[电子电信—物理电子学]