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作 者:李盼来[1] 杨志平[1] 王志军[1] 张子才[1] 郭庆林[1] 李旭[1] 刘海燕[1]
机构地区:[1]河北大学物理科学与技术学院,河北保定071002
出 处:《光子学报》2008年第10期2001-2004,共4页Acta Photonica Sinica
基 金:河北省科学技术发展基金(51215103b)资助
摘 要:采用高温固相法制备了用于白光LED的Sr3SiO5:Eu2+材料.研究了合成温度及Sr/Si对样品光谱特性及结构的影响.结果显示,随合成温度的升高或Sr/Si的减小,样品的主发射峰均产生了明显的红移,同时,样品的晶体结构也受到了影响.利用InGaN管芯激发Sr3SiO5:Eu2+材料,表现出显色性较好的白光发射光谱,色坐标为(x=0.348,y=0.326).The Sr3SiO5 : Eu^2+ phosphor was synthesized by high temperature solid state reaction method. The effect of the synthesizing temperature and Sr/Si on the spectrum characteristics and structure of the sample was investigated. The result shows that the main emission peak of the sample occurs to red shift with increasing the synthesizing temperature or decreasing Sr/Si, and the sample structure is greatly influenced by them. The emission spectrum of the white-emitting InGaN-based Sr3SiO5:Eu^2+ LED was investigated. The result shows that the color development of InGaN based Sr3SiO5 : Eu^2+ is very well, and the CIE chromaticity of InGaN-based Sr3SiO5 :Eu^2+ is (x=0. 348,y=0. 326).
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