ZnO纳米线及其器件研究进展  

Progress in ZnO Nanowire and Nanodevice

作　　者：谌小斑[1] 贺英[1] 张文飞[1] 

机构地区：[1]上海大学材料科学与工程学院高分子材料系,上海201800

出　　处：《微纳电子技术》2008年第10期590-596,600,共8页Micronanoelectronic Technology

基　　金：上海市教委重点科研项目(078813)

摘　　要：介绍了氧化锌(ZnO)纳米线(NW)的性质,总结了ZnONW的气相法、液相法、模板生长法、自组装法等制备原理和方法,详细阐述了ZnONW基光电、压敏和气敏等纳米器件的研究现状,如在发光二极管、太阳能电池、紫外激光器、纳米发电机、气敏传感器的应用现状。分析了目前ZnONW器件实用化进程中难以解决的p型掺杂等方面的问题及其在荧光探针、稀磁半导体材料和自旋电子器件等方面的研究和应用趋势,指出今后的研究及发展方向主要将集中在ZnO缺陷形成及作用机理的研究,ZnONW荧光探针的制备及其在生物医学上的应用,不同结构的ZnO超晶格和多量子阱的制备及其在自旋电子器件中的应用。The properties of ZnO nanowire （NW） are introduced, and the principles and methods of preparing ZnO nanowires are reviewed, including vapor method, liquid method, template growth method, self-assemble method and so on. The statues of optoelectronic devices, pressure-sensitive devices and gas-sensitive devices based ZnO NW are described in detail, such as light-emitting diode （LED）, solar cell, ultraviolet laser, nanogenerator and gas sensor. The difficulties resolved in practical application of ZnO NW devices, such as doped p-type ZnO, are analyzed. The tendencies of fluorescent probe, diluted magnetic semiconductor materials and quantum spin devices based ZnO NW are forecasted. It is indicated that the following researches will be focused on the defect formation and function mechanism of ZnO, preparation and application of ZnO NW fluorescent probe, research of ZnO NW superlattice and quantum well with different structures and its applications in quantum spin devices.

关 键 词：氧化锌纳米线 纳米器件 光电器件 压敏器件 气敏器件 

分 类 号：TN304.21[电子电信—物理电子学] TN303