热处理温度对磁控溅射法制备YSZ电解质薄膜性能的影响  

Influence of heat-treatment temperature on the properties of YSZ electrolyte film prepared by magnetron sputtering

作　　者：柳志民[1] 孙克宁[2] 张乃庆[2] 彭冰清[3] 

机构地区：[1]哈尔滨工业大学理学院应用化学系,黑龙江哈尔滨150001 [2]哈尔滨工业大学科学技术研究院理学中心,黑龙江哈尔滨150001 [3]北京师范大学材料与工程系,北京100875

出　　处：《功能材料》2008年第10期1656-1658,1661,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(90510006)

摘　　要：采用射频磁控溅射方法在NiO-YSZ阳极基底上制备了致密的YSZ电解质薄膜,主要研究了热处理温度对电解质薄膜性能的影响。试验发现随着热处理温度的提高,所制备的YSZ薄膜中晶粒结合更加致密,气孔率显著降低,薄膜与基底间的结合更加紧密。通过组装单体电池实际考察了薄膜的性能,发现随着热处理温度的提高,电池的开路电压及放电性能均有大幅度的提高。在800℃下,开路电压由0.82V提高到1.023V,已接近SOFC的理论电压;最大功率密度由480mW/cm2提高到760 mW/cm2。Magnetron sputtering technology was adopted to prepare dense yttia-stabilized zirconia（YSZ） electrolyte thin films on NiO-YSZ anode substrates. The influence of post-heat treatment on the properties of YSZ electrolyte films was studied. The results demonstrated that YSZ thin films after post-heat treatment were denser and crack-less than that without heat-treatment. Then the single cell of SOFC was assembled, and the performance of this cell was measured. The open circuit voltage was elevated to 1. 023V from 0.82V, which was close to the theoretical one. The maximum power density was elevated to 760mW/cm^2 from 480mW/cm^2 at 800℃.

关 键 词：SOFC YSZ 磁控溅射 热处理温度 

分 类 号：TM911.4[电气工程—电力电子与电力传动]