P2O5掺杂量对磷化酚醛树脂热解碳导电材料结构的影响  

Effects of P_2O_5 dopant on the structure of phosphorized polyacenic semiconductor materials

作　　者：王存国[1] 袁涛[1] 赵强[1] 张萍[1] 王荣顺[2] 

机构地区：[1]青岛科技大学橡塑材料与工程教育部重点实验室,山东青岛266042 [2]东北师范大学化学学院功能材料化学研究所,吉林长春130024

出　　处：《功能材料》2008年第10期1685-1688,1693,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(20674043);山东省优秀中青年科学科研奖励基金资助项目(2005BS09002)

摘　　要：用苯酚和甲醛在P2O5不同掺杂量酸化处理下合成了可溶性磷化酚醛树脂，经在氮气气氛下进行热裂解，制备了磷化酚醛树脂热解碳导电材料（PPAS）；用FTIR、XRD、TG、SEM、XPS、BET、元素分析等方法对所制备材料进行了结构表征，用标准四探针方法对裂解产物的室温电导率进行了测定。研究结果表明，在酚醛树脂酸化过程中，当P2O5用量〈5%时，所制备的热裂解材料呈现无定形结构，热裂解产物的比表面积比未磷化的裂解产物的比表面积增大；当P2O5用量在10％-20％范围时，所制备的热裂解材料呈现片状晶体结构，裂解产物的比表面积随P2O5用量的增大而减小；当P2O5掺杂量为40％时，所制备的热裂解材料呈纳米球状结构，电导率达6-7S／cm。Soluble phosphorized phenolic resin was synthesized by phenol and formaldehyde with P2O5 catalyst. Phosphorized polyacenic semiconductor （PPAS） material was prepared by heat treatment of phosphorized phenol formaldehyde （PPF） resin doped with different ratios of P2O5 at nitrogen atmosphere. The structure of PPAS material was characterized by means of FTIR, XRD,TG, XPS,SEM,BET and element analysis methods. The conductivity of PPAS material was measured by standard four-point method. The effects of different contents of P2O5 on structure of PPAS were studied in detail. The experimental results show that the structures of PPAS materials are different from those of pure polyacenic semiconductor materials （PAS） ,and change with the contents of P2O5 in PPF resin. When the content of P2O5 in PPF resin is less than 5% ,the structure of pyrolysis material presents amorphous state,and the surface area deceases with the increase of the content of P2O5. When the content of P2O5 in PPF resin is in 10%-20%, the structure of pyrolysis material presents crystal state,and the surface area increases with the enlargement of the content of P2O5. Furthermore, the pyrolysis materials present nano-balls state as the content of P2O5 in PPF resin is more than 40%, and the conductivity of PPAS materials can get to 6-7S/cm

关 键 词：P2O5 酚醛树脂 导电聚合物 碳材料 锂离子电池 

分 类 号：O636[理学—高分子化学]