活性与非活性 GaAs/Ge 太阳电池  

Active and inactive GaAs/Ge solar cells

作　　者：杜福生[1] 孙强[1] 张晓东 郭爱萍 傅云龙 

机构地区：[1]天津电源研究所

出　　处：《电源技术》1997年第6期231-234,共4页Chinese Journal of Power Sources

摘　　要：分析了活性和非活性ＧａＡｓ／Ｇｅ太阳电池不同特性，活性电池形成的机理是由于Ｇａ的自扩散，在ｎ型Ｇｅ中形成了一个ｐ型层。阐述了非活性ＧａＡｓ／Ｇｅ太阳电池的制备技术，包括采用较低的生长温度，较快的生长速率，适当晶向的单晶衬底及背面屏蔽等措施。采用光谱响应等方法判别ＧａＡｓ／Ｇｅ太阳电池究竟是活性还是非活性电池。在国内首次成功地研制出ＡＭ０效率大于１５％的ＧａＡｓ／Ｇｅ太阳电池。This paper analyzes the different properties of active GaAs/Ge SC from those of inactive GaAs/Ge SC,explains active GaAs/Ge solar cell’s formation mechanism:gallium’s self diffusion produces a ptype layer in ntype Ge wafer.The fabrication technology of inactive GaAs/Ge SC,including lower growth temperature,faster growth velocity,proper crystal orientation,back surface shield,etc.,are also presented.We use spectral responce to detect whether GaAs/Ge SC is active or inactive.We have also successfully fabricated the first GaAs/Ge SC which efficiency exceeds 15% (AM0,25℃) in China.

关 键 词：活性 太阳电池 非活性 机理 砷化镓/镓 

分 类 号：TM914.4[电气工程—电力电子与电力传动]