SiC/MoSi_2复合材料500℃氧化行为研究  

Research on oxidation behavior of SiC/MoSi_2 composites at 500℃

作　　者：席俊杰[1] 王利秋 

机构地区：[1]郑州航空工业管理学院机电工程学院,河南郑州450015 [2]中国建材装备有限公司,北京100037

出　　处：《材料热处理学报》2008年第5期18-21,共4页Transactions of Materials and Heat Treatment

基　　金：河南省国际合作项目(074300510056)

摘　　要：研究了不同SiC体积分数（30%-50%）的SiC/MoSi2复合材料低温500℃的氧化性能。结果表明：SiC/MoSi2复合材料在低温（500℃）时具有优异的抗氧化性能,氧化500h没有发生氧化粉化现象。复合材料的氧化增重随SiC体积分数的增加而减少。复合材料表面的抗氧化保护层均匀致密,材料内部缺陷少,材料内部晶界没有发生Mo与Si的氧化,材料的抗低温氧化性能得到显著提高。The oxidation behavior of SiC-（30-50）vol%/MoSi2 composites at 500℃ was studied.The results show that SiC/MoSi2 composites possess excellent oxidation resistant property without ＂pesting＂ phenomenon of MoSi2 after oxidization for 500h at low temperature（500℃）.The oxidization mass gain of the composites decreases with the increases of SiC volume fraction.The oxidation resistant layer on composites surface is even and dense.No defects such as flaws,porosity are observed in the material.The oxidization of Mo and Si doesn＇t occur at interface of inner material,and thus oxidation resistance at lower temperature of the composites is greatly improved.

关 键 词：SIC/MOSI2复合材料 低温氧化 氧化粉化 

分 类 号：TB333[一般工业技术—材料科学与工程]