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作 者:程晓敏[1] 王昊[1] 杨晓非[1] 缪向水[1] 李震[1] 李佐宜[1]
机构地区:[1]华中科技大学电子科学与技术系,湖北武汉430074
出 处:《光学精密工程》2008年第10期1800-1804,共5页Optics and Precision Engineering
基 金:国家自然科学基金资助重大项目(No.60490290)
摘 要:为了进一步减小光磁混合存储记录位尺寸,建立了用于光磁混合存储记录介质的超分辨近场结构膜层模型、近场光场模型及温度场模型,采用有限元方法对超分辨近场结构光磁混合存储介质记录层的温度场进行了计算模拟。计算中采用的光磁混合记录介质膜层结构为C(2 nm)/Sb(10 nm)/SiN(10 nm)/Co75Cr15Pt10(30 nm)。当写入温度为550 K时,随着入射激光功率的增加,光磁混合存储介质记录层温度场可写入区域面积增加。当激光功率从3.9 mW增至6.9 mW时,温度场可写入区域横向及纵向尺寸增加约1倍,记录密度减小至原记录密度的1/4。In order to further reduce the recorded bit size of optical-magnetic hybrid recording, a Super-resolution Near-field Structure (Super-RENS) thin film model, a near-field optical model and a temperature field model were established for optical-magnetic hybrid recording media. Finite element method was used to simulate the temperature distribution of the recording layer of Super-RENS hybrid recording media. The layer structure of hybrid recording media was C(2 nm)/Sb (10 nm)/SiN (10 nm)/Co75Cr15Pt10 (30 nm) in experiment. Simulated results show that the temperature writable area of hybrid recording media increases with increasing laser power,when the writing temperature is 550 K. The sizes of temperature writable area in both vertical and horizontal directions are twice and the area recording density is 1/4 those of the original one, when laser power increases from 3. 9 mW to 6.9 roW,which shows that the models are efficiency.
分 类 号:TP333.41[自动化与计算机技术—计算机系统结构]
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