基于H参量模型的外腔激光器双稳特性分析  

Analysis of ECLD Bistable Characteristics Based on H Parameter Model

作　　者：黄立平[1,2] 潘炜[2] 

机构地区：[1]青海民族学院电子工程与信息科学系,青海西宁810007 [2]西南交通大学信息科学与技术学院,四川成都610031

出　　处：《半导体光电》2008年第5期647-650,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目(10174057;90201011);教育部科学技术研究重点项目(105148);高等学校博士学科点专项科研基金项目(20030613007)

摘　　要：采用H参量模型,导出了外腔激光器(ECLD)调谐范围内双稳环的环宽解析式以及决定双稳环存在条件的倾斜因子表达式;数值模拟了剩余反射率对倾斜因子的影响,并比较了引入倾斜因子前后的环宽。结果表明,在调谐范围内偏离增益峰值的频率处不仅存在双稳环,而且环宽极大值可达以往计算结果的2倍,环宽极大值位于两种环宽相等的频率处;同时发现环宽极大值随剩余反射率减小向低频移动,频率大于增益峰值时双稳环因倾斜因子的影响可能提前消失。The analytical expressions for the hysteresis loop width in the External Cavity Laser Diode（ECLD） turning range and obliquity factor of necessary condition of hysteresis loop were derived by using H parameter model. The effect of residual reflectivity on the obliquity factor was numerically simulated, and the loop width of before and after using obliquity factor was studied. The result shows that there has no hysteresis loop at the deviated frequency of gain peak in the turning range. The maximum of loop width is two times than reported and it locates at the frequency of equality of two kind loop width, the maximum of loop width removes to lower frequency with the decrease of residual reflectivity, and the disappearance of hysteresis loop may be advanced because of the effect of obliquity factor when the frequency is over gain peak.

关 键 词：激光技术 H参量模型 双稳特性 归一化环宽 倾斜因子 剩余反射率 

分 类 号：TN248.4[电子电信—物理电子学]