半导体激光器结构对全光波长转换速率的影响  

Effects of Semiconductor Laser Structure on All Optical Wavelength Conversion Rate

作　　者：赵同刚[1] 任建华[1] 忻向军[1] 闻和[2] 

机构地区：[1]北京邮电大学电子工程学院,北京100876 [2]清华大学电子工程系,北京100084

出　　处：《半导体光电》2008年第5期749-752,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目(60677004)

摘　　要：作为自动交换全光网络中的核心器件,全光波长转换器的实用化研究一直是目前的热点问题。基于半导体激光器实现波长转换的理论模型,利用速率方程讨论了光子寿命对不同半导体激光器实现波长转换特性的影响。通过两组实验,验证了具有不同光子寿命的光纤光栅外腔半导体激光器(FBG-ECL)和分布反馈半导体激光器(DFB-LD),在实现波长转换速率及消光比等方面的差异,实验结果和仿真基本吻合。得出结论:优化半导体激光器结构,减小光子寿命对实现高速全光波长转换有重要参考价值。As the key apparatus in ASON（Automatic Switched Optical Networks）, the All Optical Wavelength Conversion （AOWC） device will take a very important effect. In this paper, based on the theoretical model of wavelength conversion in semiconductor laser, the influence of different photons life on wavelength conversion is discussed hy utilizing rate equation under the small-signal analysis. Using FBG-ECL （Fiber Bragg Grating External Cavity semiconductor Laser） and DFB-LD （Distributed FeedBack-Laser Diode）, the characteristics of wavelength conversion are discussed and analyzed by experiments in different signal rate and extinction ratio. The result is accordant with theoretical analysis. In conclusion,optimizing semiconductor laser＇s structure, and reducing photons life are very important to realize high speed all optical wavelength conversion.

关 键 词：全光波长转换 半导体激光器 光子寿命 速率方程 

分 类 号：TN929.1[电子电信—通信与信息系统]