超导HEB的I-V特性模拟  

I-V characteristic of phonon-cooled hot-electron bolometer

作　　者：范翠[1] 金飚兵[1] 康琳[1] 许伟伟[1] 陈健[1] 吴培亨[1] 

机构地区：[1]南京大学电子科学与工程系超导电子学研究所,210093

出　　处：《低温与超导》2008年第10期26-29,共4页Cryogenics and Superconductivity

基　　金：国家"973"计划项目(2007CB310404)支持

摘　　要：超导热电子测热辐射仪(Superconducting Hot-electron Bolom eter,HEB)是一种检测器件,可以对1THz以上的电磁辐射进行高灵敏度的检测。该工作是利用双温模型,假设电子和声子各自处在平衡态,但具有不同的温度,根据热平衡原理,计算出电子和声子温度在HEB桥上的分布,得到桥两端的电压值,从而得出器件的I-V特性。分析了实验环境温度,转变宽度和薄膜厚度对器件I-V的要求,并与实验测量的结果相比较,为进一步研究超导HEB的混频特性打下基础。A superconducting hot- electron bolometer （HEB） is a high sensitivity device for the electromagnetic radiation above 1 THz. In this paper, using the dual temperature model in which the electron and phonon were assumed in equilibrium state independently, the authors could get a set of coupled equations describing the spatial profile of the electron and the phonon temperature along the bridge. The current -voltage （I -V） characteristic could be calculated by solving the equations. The authors analyzed the influences of the ambient temperature of the device, the transition width and the thickness of the superconducting bridge on the I -V curves, and then compared them with the measured results.

关 键 词：超导热电子测热辐射仪(HEB) 双温模型 I—V特性 太赫兹检测 

分 类 号：TN713[电子电信—电路与系统] TM26[一般工业技术—材料科学与工程]