LaNiO_3底电极上的BiFeO_3薄膜的铁电性能  

Ferroelectric property of BiFeO_3 film deposited on LaNiO_3 bottom electrode

作　　者：刘红日[1] 王秀章[1] 

机构地区：[1]湖北师范学院物理系,黄石435002

出　　处：《功能材料与器件学报》2008年第5期895-899,共5页Journal of Functional Materials and Devices

基　　金：感谢湖北省教育厅项目资助(Q200722002);黄石市科技局项目;湖北师范学院重点项目(2006A15)资助

摘　　要：用溶胶-凝胶方法在LaNiO3底电极上制备了500℃退火的BiFeO3薄膜。研究了室温下薄膜的结构,介电与铁电性质和漏电流性质。XRD研究表明薄膜呈R3m结构,没有观察到不纯相。铁电性研究表明,薄膜具有大的剩余极化强度,在600 kV/cm的测试电场下,薄膜的剩余极化强度为20μC/cm2,矫顽场为440 kV/cm。介电性质研究表明,在整个测试频率范围内,薄膜具有小的介电损耗。而漏电流特性测试表明,通过工艺的改进,有效的限制了BiFeO3薄膜的漏电流。BiFeO3 film was prepared on LaNiO3 bottom electrodes by sol - gel process annealed at 500℃. Structure, dielectric, ferroelectric and leakage conduction properties at room temperature were studied. XtlD study shows that the film adopts R3m structure and no impure phase was observed. The study of ferroeleetricity shows that the film has large remanent polarization （Pr）, the Pr is 20 μC/cm^2 under an applied field of 700 kV/crn. The coercive field is 440 kV/em. The study on dielectric property shows that film indicated small dielectric loss at the whole frequency range. While the study on leakage current char- acteristic indicates that the leakage current is reduced through the improvement of preparation tehchnology.

关 键 词：BIFEO3薄膜 铁电性 介电性质 漏电流 

分 类 号：TN304.055[电子电信—物理电子学]