环境友好半导体Ca_2Si晶体生长及其性能研究  

Research on Crystal Growth and Properties of Environmental Friendly Semiconductor Ca_2Si

作　　者：崔冬萌[1] 任雪勇[1] 谢泉[1] 付姗姗[1] 周文娟[1] 

机构地区：[1]贵州大学电子科学与信息技术学院,贵阳550025

出　　处：《吉林大学学报（信息科学版）》2008年第5期459-464,共6页Journal of Jilin University（Information Science Edition）

摘　　要：环境友好半导体材料Ca2Si晶体是直接带隙半导体,在室温下,其禁带宽度为1.9 eV,且在4.5 eV以下能量范围内,Ca2Si的光吸收系数大于β-FeSi2,因此,有望使用Ca2Si开发发光二极管、高效率太阳能电池等。综述了近年来Ca2Si的晶格特性、光电性质及其制备方法的研究进展,由于现有的制备方法不适合大面积的制备Ca2Si材料,因此,提出了利用磁控溅射技术制备Ca2Si材料的设想。展望了Ca2Si的应用前景,探讨了当前Ca2Si研究领域中存在的问题。Environmental friendly semiconductor material Ca2Si crystal is a direct semiconductor with a band gap energy of 1.9 eV. Since the absorption coefficient of Ca2Si is larger than β-FeSi2, when the energy is under 4.5 eV, it has potential for light-emitting diode, high efficacious solar battery. The research progress of microstructural, optical and electrical properties and preparation method of Ca2Si in recent years is overviewed. As the existing method of preparation is not suitable for large area of the material Ca2Si, the preparation of Ca2Si with magnetron sputtering is advanced. Finally, the application prospect and the problems existing in current research of CaaSi are discussed.

关 键 词：Ca2Si晶体 直接带隙材料 太阳能电池 

分 类 号：TN304.2[电子电信—物理电子学]