Pt/WO_3纳米薄膜的氢敏特性  

Gas Sensitivity to H_2 of P_t-WO_3 Thin Film

作　　者：范小花[1] 唐一科[2] 侯长军[3] 范瑛[4] 

机构地区：[1]重庆科技学院安全工程学院,重庆401331 [2]重庆大学机械传动国家重点实验室,重庆400030 [3]重庆大学化学化工学院/光电技术及系统教育部重点实验室,重庆400030 [4]中国工程物理研究院结构力学研究所,四川绵阳621000

出　　处：《材料科学与工程学报》2008年第5期761-764,769,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(10376045);重庆市自然科学基金资助项目(8418)

摘　　要：用溶胶-凝胶法和磁控溅射法相结合制备了催化剂Pt掺杂的WO3纳米薄膜,通过改变氢气的体积分数、催化剂Pt的含量及热处理温度等实验因素,对Pt/WO3薄膜的氢致变色性能进行了测试;并利用X射线光电子能谱仪(XPS)分析了薄膜的氢敏机理。实验结果表明:先用溶胶-凝胶法制得WO3薄膜,然后再用磁控溅射法在该WO3薄膜上溅射掺杂5%的Pt,制得Pt/WO3双层纳米薄膜,经100℃热处理后,可以获得性能稳定且具有良好氢敏特性的优质薄膜;薄膜能检测的氢气浓度低至0.008%;XPS分析表明,W5+与W6+之间的转换是引起WO3薄膜氢致变色现象的主要原因。Pt-WO3 thin films have been prepared with Sol-Gel method and DC reactive magnetron sputtering method. By changing the volume fraction of He, the concentration of catalyst（Pt） and the temperature of heat treatment, the hydrogen sensing properties of the gasochromic thin films were tested. And the gasochromic mechanism of tungsten oxide thin films has been analysed with XPS. The results show that, when mass fraction of Pt is 5wt% and the annealed temperature is 100℃ ,the Pt-WO3 thin film has high sensitivity to low volume fraction of H2. It can respond to 0. 008% H2. And the charges transfer between W^5＋ and W^6＋ is the main reason of WOx film＇ s gasochromic phenomenon.

关 键 词：Pt/WO3纳米薄膜 氢敏特性 机理 

分 类 号：O484.1[理学—固体物理] TN304.055[理学—物理]