汉语阅读障碍儿童听觉认知事件相关电位研究  

Study on the auditory cognitive event-related brain potentials in reading disorders of children

作　　者：韩娟[1] 时俊新[1] 饶广勋[2] 石淑华[1] 余毅震[1] 杨森焙[1] 赵晓红[2] 张玲莉[2] 吴汉荣[1] 

机构地区：[1]华中科技大学同济医学院公共卫生学院儿少卫生与妇幼保健学系,湖北武汉430030 [2]华中科技大学同济医学院法医学系

出　　处：《中国妇幼保健》2008年第31期4415-4417,共3页Maternal and Child Health Care of China

基　　金：湖北省自然科学基金资助项目(编号:2003ABA139)

摘　　要：目的:探讨阅读障碍儿童认知事件相关电位的特点,以了解阅读障碍认知缺陷的脑机制。方法:利用事件相关电位技术,采用听觉主动Oddball范式,比较阅读障碍(RD)儿童与正常儿童在不同注意状态下的听觉事件相关电位特点。结果:在注意不计数条件下,RD组儿童N2、P3潜伏期长于非RD组儿童,P3波幅低于非RD组儿童;在注意计数条件下,RD组儿童记数失误率远大于非RD组儿童,其P3潜伏期显著长、P3波幅显著低于非RD组儿童,差异均有统计学显著意义(P<0.01)。结论:阅读障碍儿童存在注意及记忆缺陷。Objective： To explore auditory cognitive event - related brain potentials in reading disorders （RD） of children to understand brain mechanisms of cognitive disorder for reading disorders. Methods： By the technology of event - related potentials and an auditory active oddball paradigm, the changes of auditory event - related brain potentials of the reading disorders of children were compared with that of the controls in different attentive status. Results ： In attentive deviant stimulus without accounting numbers, latencies of N2 and P3 in RD children were significantly longer than that of children without RD, amplitudes of P3 were lower than that of children without RD. In attentive deviant stimulus with accounting numbers, error rate of accounting numbers in RD children was significantly higher than that in children without tLD. Latencies of P3 in RD children were longer , amplitudes of P3 were lower than those of children without RD. Conclusion： RD children have certain degree of attention and memory deficit.

关 键 词：汉语 儿童 阅读障碍 听觉 认知事件相关电位 

分 类 号：R729[医药卫生—儿科]