用于KDP晶体的桥式聚倍半硅氧烷防潮膜  

Moisture-resistant protective film for KDP crystal based on bridged polysilsesquioxane

作　　者：胡胜伟[1,2] 徐耀[1] 吴东[1] 孙予罕[1] 吕海兵[3] 赵松楠[3] 

机构地区：[1]中国科学院山西煤炭化学研究所煤转化国家重点实验室,太原030001 [2]中国科学院研究生院,北京100049 [3]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《强激光与粒子束》2008年第9期1474-1478,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金重点项目(20133040)

摘　　要：以间苯亚甲基二异氰酸酯与氨丙基三乙氧基硅烷反应制备了具有长桥链结构的聚倍半硅氧烷前驱体,利用制备的前驱体在碱性条件下水解缩聚制备了桥式聚倍半硅氧烷溶胶,并采用提拉浸涂法对磷酸二氢钾(KDP)晶体镀膜。通过1H NMR对前驱体进行结构定性,利用29Si MAS NMR和N2吸附-脱附表征对凝胶结构进行了分析,用AFM对薄膜的表面形貌进行了研究,通过湿度为60%时KDP晶体光学性质的变化考察了薄膜的防潮性能。利用三倍频和基频激光测试了薄膜的抗激光损伤性能。结果表明:这种桥式聚倍半硅氧烷薄膜对KDP晶体具有很好的防潮保护作用,并显示了较好的抗激光损伤性能。A novel bridged silsesquioxane with long bridging groups was synthesized with m-xylylene diisocyanate and 3- aminopropyltriethoxysilane. Bridged polysilsesquioxane sol was prepared by the sol-gel polycondensaion of as-synthesized bridged silsesquioxane under basic catalysis. Thin film was obtained by dip-coating the bridged polysilsesquioxane sol on the KDP crystal. 1 H NMR was used to characterize the bridged silsesquioxane. ^29 Si MAS NMR and N, absorption/desorption analysis were adopted to study the xerogel structure. The morphology of film was observed by AFM analysis. The moisture-resistance of film under rel- ative humidity 60 % for KDP crystals was studied. The laser-induced damage threshold（LIDT） of bridged polysilsesquioxane film at 355 nm and 1 064 nm was measured. The results show that the bridged polysilsesquioxane film exhibits excellent moisture-resistance for KDP crystal and relative high LIDT.

关 键 词：桥式聚倍半硅氧烷 防潮膜 磷酸二氢钾 前驱体 

分 类 号：TN24[电子电信—物理电子学]