热等静压制备N型Si_(95)Ge_5合金及其热电性能  

Fabrication and thermoelectric properties of N-type Si_(95)Ge_5 alloys by hot isostatic pressing

作　　者：徐亚东[1] 徐桂英[1] 葛昌纯[1] 

机构地区：[1]北京科技大学特种陶瓷与粉末冶金研究中心,100083

出　　处：《粉末冶金技术》2008年第5期378-381,393,共5页Powder Metallurgy Technology

基　　金：国家高技术研究发展计划资助项目(2002AA302496);国家自然科学基金资助项目(50042014;60176004)

摘　　要：采用热等静压的工艺合成了掺杂GaP量为≤2．0％（摩尔分数）的N型Si95Ge5固溶体合金，对合成后的样品进行了物相结构分析及对微观形貌进行了表征，并研究了在室温下GaP掺杂量对载流子浓度、电导率、Seebeck系数及功率因子的影响。对于复合掺杂（P＋GaP）的N型Si95Ge5合金，试验结果表明：Seebeck系数在GaP掺杂量为0．5％（摩尔分数）时最小，之后随着GaP掺杂量在0．5％～1．5％范围内的增加而增加；电导率在GaP掺杂量小于1．5％范围内随GaP掺杂量的增加而单调增加；GaP的掺杂量在0．5％～1．5％范围内时，其功率因子在303K时达到最大值。N-type Si95Ge5 alloys doped with （0 - 2.0mol% ）GaP have been fabricated by hot isostatic pressing. Phase structure and morphology, as well as the effect of GaP dependence of thermoelectric on carrier concentration, electrical conductivity, Seebeck coefficent and power factor has been studied at room temperature. For Si95 Ges samples multidoped with （P ＋ GAP）, the Seebeck coefficient values have a minimum at 0.5mol% GaP and then increase with the addition GaP at the range of 1.0mol% - 1.5mol%, while the electrical conductivity values increase monotonically with increasing GaP content. For multidoped N-type Si95Ge5 alloys samples with GaP in the range of 0.5mol% - 1.5mol%, the power factor reach maximum at 303K.

关 键 词：热电材料 SIGE合金 热电性能 热等静压 

分 类 号：TN37[电子电信—物理电子学] TG111.3[金属学及工艺—物理冶金]