半导体桥电爆过程的能量转换测量与计算  

Measurement and Calculation for SCB Electro-explosion Energy Conversion Features

作　　者：张文超[1] 叶家海[1] 秦志春[1] 周彬[1] 田桂蓉[1] 徐振相[1] 

机构地区：[1]南京理工大学化工学院,江苏南京210094

出　　处：《含能材料》2008年第5期564-566,576,共4页Chinese Journal of Energetic Materials

基　　金：重点实验室基金(9140C3701040701)

摘　　要：对电容激励模式下半导体桥(SCB)的电流、电压以及光的变化进行了测试,从能量的角度对半导体桥电爆换能过程进行了分析,并对电爆换能过程中硅桥物质形态的变化进行了量化分析,在电容为22μF、充电电压为45 V的情况下,SCB上电压为最低时(2.18μs,10 V)有61.1%的桥区熔化,SCB上电压为最高时(3.48μs,43 V)桥区有14.5%气化,在SCB发火光强最亮时(17.60μs)有70.3%的半导体硅桥电离。The changes of current,voltage and light intensity of semiconductor bridge （SCB） with discharge time under capacitor energy supply excitation were conducted. The electro-explosion energy conversion processes and phase changes for SCB were analyzed based from the electric energy input and enthalpy change theoretical calculation. Results show that melting ratio,vaporizing ratio and ionizing-ratio of SCB are 61. 1% , 14.5% and 70.3% at 2. 18 μs, 3.48 μs, and 17.60 μs respectively when the capacitance is 22 μF and the charging voltage is 45 V.

关 键 词：应用化学 火工品 半导体桥 等离子体 电爆换能 

分 类 号：TJ45[兵器科学与技术—火炮、自动武器与弹药工程] TN303[电子电信—物理电子学]