La_(0．88)Te_(0．12)MnO_(3-δ)薄膜的结构及光诱导特性研究  

Photoinduced character and the structure of La_(0.88)Te_(0.12)MnO_(3-δ)thin film

作　　者：高国棉[1] 陈长乐[1] 韩立安[1] 王建元[1] 崔海涛[2] 

机构地区：[1]西北工业大学理学院,陕西西安710072 [2]空军工程大学理学院,陕西西安710051

出　　处：《功能材料》2008年第8期1256-1258,共3页Journal of Functional Materials

基　　金：国家自然科学基金(50331040;60171034)

摘　　要：用脉冲激光沉积法在LaAlO_3衬底上制备了La_(0.88)Te_(0.12)MnO_(3-δ)(LTeMnO)薄膜。X射线衍射分析表明,薄膜具有钙钛矿赝立方结构,且沿(012)方向择优生长;电阻率-温度关系显示样品发生了金属绝缘体转变和庞磁电阻效应,转变温度为278K;在0.4T的磁场下,其磁电阻最大值为16.9%,对应的温度为223K。在绿激光作用下,光致电阻率变化最大值为13.2%;原因可能是激光作用影响了体系中载流子的浓度,进而影响了体系的自旋。La0.88 Te0.12 MnO3-δ thin film has been prepared on LaAlO3 （LAO） substrates by pulsed laser deposition method, the photoinduced resistivity change and clossal magnetoresistance effect have been investigated. The results show that the film has a metal-insulator transition temperature TMI of 278K and the maximum magnetoresistance ratio of 16.9% at 0.4T. Under laser irradiation, the resistivity increase below TMI, but there is a decrease above TMI. The maximum relative change in resistivity （LR %） is 13.2%. Since the laser photon energy is larger than the band gap of the thin films, electron-hole pairs are created in the film. For the electrons can be captured by the oxygen vacancy easily, then extra holes carriers are produced, which can induce local insulator-metal phase change and photo-induced effect.

关 键 词：薄膜 光诱导效应 CMR效应 

分 类 号：O482[理学—固体物理]