应用于等离子显示驱动的高压集成电路工艺  

High-voltage integrated circuit technology for plasma display panel drivers

作　　者：洪慧[1,2] 韩雁[1] 叶晓伟[1] 

机构地区：[1]浙江大学微电子与光电子研究所,浙江杭州310027 [2]杭州电子科技大学微电子CAD研究所,浙江杭州310018

出　　处：《浙江大学学报（工学版）》2008年第10期1715-1718,共4页Journal of Zhejiang University：Engineering Science

基　　金：浙江省科技计划资助项目(2004C31094)

摘　　要：介绍了等离子显示板(PDP)扫描驱动集成电路(IC)的结构和工作原理,提出了一种与2.0μm标准CMOS工艺完全兼容的新型高压BCD工艺.设计了新型场氧作厚栅HV-pMOS器件和薄栅氧HV-nVDMOS器件,开发了一种新型的PDP扫描驱动集成电路.采用此工艺可以节省三个光刻版、两次注入(HV-N阱和PDA)和一次氧化工艺,有效地降低工艺复杂度和生产成本.最终流片和测试结果表明,HV-nVDMOS和HV-pMOS管的耐压均超过165 V,达到系统设计要求.当电源电压为90 V、负载为200 pF时,PDP扫描驱动芯片的上升沿和下降沿时间分别为165和30 ns,这充分验证了芯片具有很强的驱动电流能力.A new high-voltage Bipolar-CMOS-DMOS （BCD） technology compatible with 2.0 gm standard CMOS process was developed for plasma display panel （PDP） scan driver intergrated circuit （IC）. The new field-oxide gate high-voltage pMOS and thin-oxide high-voltage nVDMOS were proposed and a new PDP scan driver IC was designed. The technique can reduce three masks, two ion-implantations and one oxidation to reduce process complexity and cost. Results showed that the breakdown voltages of HV-nVDMOS and HV-pMOS were both exceed 165 V, which achieved the system requirements. The rising and falling time of the PDP scan driver IC were 165 and 30 ns respectively with 90 V power supply and 200 pF capacitive load, which indicated a high driving capability.

关 键 词：等离子平板显示屏 扫描驱动集成电路 场氧栅 高压驱动电路 

分 类 号：TN43[电子电信—微电子学与固体电子学]