Effect of La Doping on Microstructure and Ferroelectric Prop-erties of Bi_4Ti_3O_(12) Thin Films Prepared by Sol-gel Method  

作　　者：付承菊 

机构地区：[1]School of Material Science and Engineering, Wuhan University of Technology

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2008年第5期622-624,共3页武汉理工大学学报（材料科学英文版）

基　　金：the Foundation of Wuhan University of Science and Technology

摘　　要：The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.

关 键 词：ferroelectric properties sol-gel preparation Bi4Ti3O12 thin films Bi3.25La0.75Ti3O12 thin films La doping FATIGUE 

分 类 号：TB383.2[一般工业技术—材料科学与工程]