AuCl_3/HgI_2与Au/HgI_2接触的I-V特性表征  

I-V Characteristics of Mercuric Iodide Crystal with AuCl_3 and Au Contacts

作　　者：许岗[1,2] 介万奇[2] 

机构地区：[1]西安工业大学材料与化工学院,西安710032 [2]西北工业大学材料学院,西安710072

出　　处：《西安工业大学学报》2008年第5期452-455,共4页Journal of Xi’an Technological University

基　　金：国家自然科学基金(50336040)

摘　　要：利用4155型CVIV测试仪表征了分别采用蒸镀Au、涂敷氯金酸(AuCl3溶液)作为电极材料时HgI2晶体I-V特性.测试表明,采用Au电极和AuCl3电极所测量HgI2晶体的电阻率分别为6×1011Ω.cm和8.1×1011Ω.cm,欧姆接触特性值b为0.8341和1.0291.分析认为溅射Au工艺中的温度升高和真空度造成晶体表面质量下降,使Au/HgI2欧姆接触特性较差.AuCl3电极本质上是氯金酸分解产生Au单质并形成电极.由于电极制备工艺没有显著影响晶体表面质量,使AuCl3/HgI2具有良好的欧姆接触特性.I-V characteristics of HgI2 crystal wafers with sputtered gold and coated chloroauric acid were studied using 4155 CVIV instrument. The results indicated that the relative resistivity of HgI2 with sputtered Au contact and chloroauric acid coated AuCI3 was 6 × 10^11 Ω · cm, 8. 1 × 10^11 Ω · cm respectively, and the fitting data ,b, representing ohmic contacts, were 0. 8341andl. 0291, respectively. The sputtering process deteriorated the interface quality of HgI2 crystal wafers, and resulted worse ohmic contacts. Au electrode formed from decomposition of chloroauric acid produces better ohmic contacts due to coating processing compared with that of sputtering gold.

关 键 词：碘化汞 金 氯化金 电极 电压-电流特性 

分 类 号：TN304[电子电信—物理电子学]