Cu元素对氧化锌压敏电阻性能的影响  

Effect of Cu on the Electrical Properties of ZnO Varistor

作　　者：洪俊伟[1,2] 章来平[1,2] 邴绍同 孙丹峰[1,2] 

机构地区：[1]江苏省净化工程技术研究中心,江苏苏州215011 [2]苏州中普电子有限公司；江苏苏州215011

出　　处：《电瓷避雷器》2008年第5期30-33,37,共5页Insulators and Surge Arresters

摘　　要：通过添加Cu(NO3)2溶液的方式,在中压压敏电阻基础料中引入杂质元素Cu,测试其电性能并分析影响机理。得出:Cu元素在压敏电阻中无论哪种固溶形式,都是以受主态方式对压敏电阻的性能产生影响;随着Cu掺入量的增加,施主浓度Nd减小,但同时也引起晶界界面电子态密度Ns的减少,补偿了施主浓度的减少,从而使φB减少,非线性系数减小;随着Cu掺入量的增加,晶粒电阻增大,晶界电阻减小,使电压梯度上升,漏电流几乎不变,电容增大,残压比增大,通流能力和耗散能量能力变差;对比基料来讲,添加Cu元素之后漏电流是下降的;建议在生产过程中,Cu掺入量(质量分数)最好不要超过8×10-6,最大不要超过20×10-6。Cu element was doped into mid-voltage varistor composition with Cu（NO3）2 solution. It is obtained that Cu element imposes on varistor properties in acceptor mode regardless of its solid solution pattern. The donor concentration Nd reduces as the Cu element content increases, and meanwhile causes decrease of electron density Ns at boundary layer which compensates decrease of donor concentration, making φB reducing and nonlinearity down. As Cu element increases, the crystal resistance drops which results in voltage gradient rise, stability of leakage current, inereasement of capacitance and residual voltage ratio as well as degradation of discharge and power dissipation capability. Cu dop- ing causes leakage current drop as compared with the basic composition. It is suggested to introduce Cu content （mass fraction） not above 8×10^-6 preferably and 20×10^-6 at most.

关 键 词：Cu元素 溶液添加法 压敏电阻 晶粒电阻率 

分 类 号：TM54[电气工程—电器]