纳米有机硅杂化聚酰亚胺薄膜的结构及电性能研究  

Analysis on Structure and Dielectric Property of Nano-organosilicon/PI Film

作　　者：刘晓玉[1] 陈慧丹[1] 陈昊[1] 李娟[1] 范勇[1] 

机构地区：[1]哈尔滨理工大学材料科学与工程学院,哈尔滨150040

出　　处：《绝缘材料》2008年第5期40-43,共4页Insulating Materials

基　　金：国家自然科学基金资助项目(50373008);黑龙江省科技攻关项目(GC04A216)

摘　　要：调整二苯基二甲氧基硅烷和正硅酸乙酯的摩尔比,通过溶胶-凝胶法制备了纳米有机硅杂化聚酰亚胺(PI)薄膜。用FT-IR,SEM表征了薄膜的化学结构和表面形貌,对电气强度,耐电晕性进行了实验研究。结果表明,随着纳米有机硅网络结构的变化,掺杂薄膜的电气强度先保持平稳后下降,大约在二苯基二甲氧基硅烷和正硅酸乙酯的摩尔比为1:3时出现极大值,二苯基二甲氧基硅烷和正硅酸乙酯的摩尔比为1:1时杂化薄膜的平均耐电晕寿命为纯聚酰亚胺薄膜平均耐电晕时间的8.57倍。Adjusting the mol ratio of Diphenyldimethoxysilane （DDS） and tetraethoxysilane （TEOS）, nano-organic-silica/polyimide films were prepared by means of sol-gel method. The chemical structure and surface morphology are characterized via FT-IR and SEM. The relationship between the structure and breakdown strength, and corona-resistant property were studied via experiment. The results show that along with the change of nano-organosilicon network in films, the breakdown strength of doped PI film keeps stable at the beginning and decreases later. The breakdown strength comes to highest when the tool ratio between DDS and TEOS is 1 ： 3. When the ratio between DDS and TEOS is 1 ： 1, the average corona-resistant time of doped PI film is 8.57 times as long as the average corona-resistant time of pure PI films.

关 键 词：聚酰亚胺 纳米有机硅 电性能 

分 类 号：TM215.3[一般工业技术—材料科学与工程] TQ323.7[电气工程—电工理论与新技术]