Energy levels and radiative lifetimes of 3pns ~3p_0 and 3pnd ~3P_0 series of SiⅠ  

作　　者：梁良 周超 张玲 

机构地区：[1]Department of Physics,Xi'an University of Architecture and Technology,Xi'an 710055

出　　处：《Chinese Optics Letters》2008年第11期804-806,共3页中国光学快报（英文版）

基　　金：supported by the Basic Research Foundation of Xi'an University of Architecture and Technology (No.JC0510);the Foundation for Talents of Xi'an University of Architecture and Technology (No.RC0604);the Foundation of Education Department of Shaanxi Province (No.08JK343).

摘　　要：The energy levels and lifetimes of 3pns ^3po （n = 7 - 35） and 3pnd ^3p0 （n = 6 - 17） series of neutral silicon are calculated and predicted by means of multichannel quantum defect theory （MQDT）. In addition, the perturbation caused by core-excited state 3s3p^3 is discussed. The 3pnd ^3p0 series, especially 3p4d ^3p0, 3p5d ^3P0, and 3p6d ^3P0 are perturbed strongly by the core-excited state 3s3p3 ^3P0. These cause the lifetime of 3pnd ^3P0 （n = 5 - 7） to be less than that of 3p4d 3Po. The lifetimes of 3p14d ^3P0 （65479.14 cm^-1） and 3p16d ^3p0 （65608.77 cm^-1） are less than that of their frontal states respectively, because these states are perturbed by 3p22s ^3p0 （65476.48 cm-1） and 3p30s ^3p0 （65608.99 cm^-1） respectively.The energy levels and lifetimes of 3pns ^3po （n = 7 - 35） and 3pnd ^3p0 （n = 6 - 17） series of neutral silicon are calculated and predicted by means of multichannel quantum defect theory （MQDT）. In addition, the perturbation caused by core-excited state 3s3p^3 is discussed. The 3pnd ^3p0 series, especially 3p4d ^3p0, 3p5d ^3P0, and 3p6d ^3P0 are perturbed strongly by the core-excited state 3s3p3 ^3P0. These cause the lifetime of 3pnd ^3P0 （n = 5 - 7） to be less than that of 3p4d 3Po. The lifetimes of 3p14d ^3P0 （65479.14 cm^-1） and 3p16d ^3p0 （65608.77 cm^-1） are less than that of their frontal states respectively, because these states are perturbed by 3p22s ^3p0 （65476.48 cm-1） and 3p30s ^3p0 （65608.99 cm^-1） respectively.

关 键 词：MQDT LIFE Energy levels and radiative lifetimes of 3pns and 3pnd series of Si 

分 类 号：O562[理学—原子与分子物理]