Fully differential optoelectronic integrated receiver implemented by 0.35μm standard CMOS process  

作　　者：YU Chang-liang MAO Lu-hong XIAO Xin-dong XIE Sheng ZHANG Shi-lin 

机构地区：[1]School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China

出　　处：《Optoelectronics Letters》2008年第6期395-398,共4页光电子快报（英文版）

基　　金：the National Natural Science Foundation of China (grant numbers:60536030 and 60676038);the Tianjin Natural Science Foundation (No.06YFJZJC00200)

摘　　要：A high-bandwidth, high-sensitivity fully differential optoelectronic integrated receiver is implemented in a chartered 3.3 V standard 0.35μm analbg CMOS process. To convert the incident light into a pair of fully differential photo-currents, a novel fully differential photodetector is proposed, which is composed of two completely identical photodiodes. The mea- surement results show that the receiver achieves a 1.11 GHz 3 dB bandwidth and a -13 dBm sensitivity for a 10-12 bit error at 1.5 Gb/s data rate under illumination by 850 nm incident lights.

关 键 词：光电子联合接收器 CMOS 高灵敏度 光电二极管 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN850