Design of violet InGaN light-emitting diode with staggered quantum well structure  

作　　者：LI Wei-jun ZHANG Bo XU Wen-Lan LU Wei 

机构地区：[1]State key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China [2]Department of Electronic Engineering, East China Normal University, Shanghai 200062, China

出　　处：《Optoelectronics Letters》2008年第6期399-402,共4页光电子快报（英文版）

基　　金：the National Natural Science Foundation of China (Grant No.10474020);Knowledge Innovation Program of the Chinese Academy of Sciences (No.C2-14)

摘　　要：The staggered InGaN quantum well (QW) structure and the conventional InGaN QW structure for the emission at a particu-lar wavelength of 400 nm are designed and theoretically investigated,including the distribution of the carriers’ concentration,the radiative recombination rate,the Shockley-Read-Hall (SRH) recombination rate as well as the output performance and the internal quantum efficiency. The theoretical result indicates that the staggered QW structure offers significant improve-ment of carriers’ concentration in the QW,especially the hole concentration. The output power and the internal quantum efficiency also show 32.6 % and 32.5 % enhancement,respectively,in comparison with that of the conventional InGaN QW structure. The reduction of the electron overflow can be the main factor for the improvement of the optical perfor-mance for novel staggered InGaN QW structure.The staggered InGaN quantum well （QW） structure and the conventional InGaN QW structure for the emission at a particular wavelength of 400 nm are designed and theoretically investigated, including the distribution of the carders＇ concentration, the radiative recombination rate, the Shockley-Read-Hall （SRH） recombination rate as well as the output performance and the internal quantum efficiency. The theoretical result indicates that the staggered QW structure offers significant improve- ment of carriers＇ concentration in the QW, especially the hole concentration. The output power and the internal quantum efficiency also show 32.6 % and 32.5 % enhancement, respectively, in comparison with that of the conventional InGaN QW structure. The reduction of the electron overflow can be the main factor for the improvement of the optical performance for novel staggered InGaN QW structure.

关 键 词：发光二级管 量子阱 波长 SRH 

分 类 号：TN312.8[电子电信—物理电子学]