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作 者:宋瑞丽[1,2] 张筱杰[1] 刘帅[1] 何毓敏[1] 付丽梅[1] 赵礼杰[1] 刘鸿[1] 侯乔菊[3] 陈平[2] 段羽[2]
机构地区:[1]东北电力大学物理系,吉林132012 [2]吉林大学集成光电子国家重点实验室,吉林长春130012 [3]上海师范大学,上海201418
出 处:《光电子.激光》2008年第11期1454-1457,共4页Journal of Optoelectronics·Laser
摘 要:首先制备了结构为ITO/m-MTDATA(30nm)/NPB(20nm)/CBP:FIrPIC(10%,30nm)/5,6,11,12-tetra-phenylnaphthacene(rubrene)(xnm/Bphen(40nm)/LiF(0.8nm)/Al的器件。此器件效率降低,为提高效率,我们又制备了另一器件,其结构为ITO/m-MTDATA(30nm)/NPB(20nm)/rubrene(0.2nm)/CBP:FIrPIC(10%,30nm)/Bphen(40nm)/LiF(0.8nm)/Al。此器件亮度效率及色坐标均有所改善。此器件的最大亮度为14V时,10050cd/m2,最大效率为8V时,4.59(cd/A),7V时,1.89(lm/w)。1000cd/m2时的效率约为4.00cd/A(10V时,1.25lm/w)。当亮度由1354cd/m2变到10050cd/m2时,色坐标由(0.33,0.37)变到(0.34,0.37)。The structure of ITO/ m-MTDATA (30 nm)/NPB(20 nm)/CBP: FIrPIC(10% ,30 nm)/rubrene(x)/Bphen(40 nm)/LiF(0.8 nm)/Al was fabricated by using blue phosphorescent and yellow fluorescent matter. The device can give white light as x=1 nm. The maximum luminance and power efficiency of the WOLED are 4 464 cd/m^2 at 13 V and 2.058 cd/A at 5 V,1.29 lm/W at 54 V, respectively. The CIE of the device changes from(0.37,0.43) at 1556 cd/m^2 to (0. 35, 0.39) at 3 480 cd/m^2. Due to the bad efficiency,we made another device with structure of ITO/m-MTDATA (30 nm)/NPB(20 nm)/rubrene(0.2 nm)/CBP:FIrPIC(10% ,30 nm) /Bphen(40 nm)/LiF(0.8 nm)/Al. Its' maximum luminance and power efficiency are 10050 cd/m^2 at 14 V and 4.59 cd/A at 8 V,1.89 lm/W at 7 V, respectively. When the bright changes from 1354 cd/m^2 to 10 050 cd/m^2 ,the CIE of the device changes from (0.33,0.37) to (0.34,0.37).
分 类 号:TN383.1[电子电信—物理电子学]
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