GIS中VFTO影响因素的分析  

Analysis of VFTO influence Factors in GIS

作　　者：孙彤[1] 高有华[2] 

机构地区：[1]沈阳职业技术学院汽车分院,辽宁沈阳110015 [2]沈阳工业大学电气工程学院,辽宁沈阳110178

出　　处：《沈阳师范大学学报（自然科学版）》2008年第4期429-431,共3页Journal of Shenyang Normal University:Natural Science Edition

基　　金：辽宁省科技厅基金资助项目(20041025)

摘　　要：针对实际500kV GIS中隔离开关分合母线充电电流电路,确定了数值模拟快速暂态过电压(VFTO)的等值电路,对VFTO进行了数值模拟,并讨论了变压器入口电容、母线残余电荷等元件参数的变化对VFTO幅值的影响.With regard to a charged electric current circuit of practical 500 kV GIS is presented, in which the disconnect switch is disconnecting and closing the bus. The dynamic circuit model of each component is confirmed, and the equivalence circuit is established in GIS. The equivalence circuit of very fast transient over-voltage（VFTO）is numerically simulated. VFTO is numerically simulated sequentially. Then when the parameter of transformer＇s entrance capacitance and bus＇s remain charge as well as support insulator are endowed with different value, the influence on the wave shape and the change rules of VFTO is discussed.

关 键 词：气体绝缘开关装置(GIS) 快速暂态过电压(VFTO) 数值模拟 

分 类 号：TM86[电气工程—高电压与绝缘技术]