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作 者:邢旭[1] 刘益春[1] 齐秀英[1] 王荣顺[2] 谢德民[2]
机构地区:[1]东北师范大学物理系 [2]东北师范大学化学系
出 处:《Chinese Journal of Chemical Physics》1990年第1期64-69,共6页化学物理学报(英文)
摘 要:本文对聚并苯材料电学、光学特性的初步实验结果表明,聚并苯材料的电导率随裂解温度的升高而增大。在裂解温度(T_p)为600℃的样品中,仅在77K-100K温区内呈现三雏变程跳跃(3D-VRH)导电特征,在100K-150K和150K-400K两个温区内样品电导率和温度的logσ-1/T曲线均表明样品中存在两个不同受主能级(或能带)。Raman光谱的研究表明,随着裂解温度的升高,样品中形成有序石墨结构的芳香稠环增多,π电子导电性增强,电导率增大,同logσ-1/T曲线给出的结果一致。光致发光的实验结果表明,即使样品电导率大于10S·cm^(-1),也未形成窄带隙半导体材料,并得出聚并苯半导体材料的禁带宽具有2.20eV量级。Both electrical and optical characteristic have been studied for.polyacenic material prepared by pyrolysis of phenolformaldehyde resin. The experiment(?)l results indicate that the electrical conductivity of polyacenic material increases with the rise in pyrolytic temperature(T_p). The sample prepared at T_p=600℃) demonstrates that the behavior is governed by three-dimensionals-range-hopping (3D-VRH) mechanism at the temperature range 77K-100K. Both 0.052eV and 0.074eV acceptical energy levels (or energy band ) exist in this sample. Raman spectrum demonstrates that the grapitization structured aromatic rings increase with the rise of the pyrolytic temperature, which would give rise to the electrical conductivity. The pristine polyacenic material can not become narrow gap semiconductor even if the electrical conductivity of sample is larger than 10~1 S · cm^(-1).
分 类 号:TM242[一般工业技术—材料科学与工程]
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