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作 者:李珍[1] 刘岩岩[1] 吴明红[1] 焦正[1] 赵兵[1]
机构地区:[1]上海大学环境与化学工程学院射线应用研究所,上海201800
出 处:《核技术》2008年第11期834-837,共4页Nuclear Techniques
基 金:上海市重点学科(T0105)项目资助
摘 要:研究了电子束辐照对二氧化锡(SnO2)半导体气敏传感器的气敏性能影响。结果表明,随着电子束辐照剂量的增加,SnO2传感器对氢气、乙醇的灵敏度和选择性系数逐渐增加,传感器的响应和恢复时间逐渐缩短。考察了电子束辐照前后SnO2传感器稳定性。利用元件表面吸附理论分析了电子束辐照改性SnO2气敏传感器气敏性能的机理。SnO2 gas sensors were irradiated by 1.75 MeV electron beams and effects of the EB irradiation on the performance of the sensors were studied. The results showed that sensitivity of the irradiated SnO2 sensors to hydrogen and ethanol were greatly improved. The sensitivity and coefficient of selectivity to hydrogen and ethanol were enhanced with increasing doses, whereas the response and recovery time decreased. Mechanism of the sensitivity improvement of the irradiated SnO2 sensors was discussed with the adsorption theory on surface.
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