加速坩埚旋转布里奇曼法碲镉汞晶体生长  

Bridgman Growth of Hg(1-x)Cd_xTe Using ACRT

作　　者：肖绍泽[1] 邵式平[1] 

机构地区：[1]昆明物理研究所,昆明650223

出　　处：《激光与红外》1997年第5期301-304,共4页Laser & Infrared

摘　　要：叙述了采用加速坩埚旋转技术（ACRT）Bridgman方法生长碲镉汞晶体的原理和方法。用这种技术生长的碲镉汞晶体的纵向和横向组分均匀性比常规Bridgman生长方法有很大的改善，提高了用于制作平均探测率为8．0×1010cmHz1／2W－1的8元Sprite探测器的晶片可用率。The prinsiple and methods of the mixed semiconductor Hg1-xCdxTe ACRT Bridgman grown was described. An increase in the level of melt mixing near to the interface has been achieved and this has resulted in a much greater degree of axial and radial composition homogeneity than hitherto possible. Available wafers which was made the Sprite detector with D*=8. 0 × 1010cmHz1/2 W-1 were increased.

关 键 词：加速坩埚旋转 红外探测器 材料 碲镉汞 晶体生长 

分 类 号：TN215.04[电子电信—物理电子学] O782.9[理学—晶体学]