离子径迹模板辅助法制备InSb纳米线  

Preparation of InSb Nanowire by Ion-Track Template

作　　者：姚会军[1,2] 刘杰[1] 段敬来[1,2] 莫丹[1,2] 陈艳峰[1,2] 张苓[1] 侯明东[1] 孙友梅[1] 

机构地区：[1]中国科学院近代物理研究所,甘肃兰州730000 [2]中国科学院研究生院,北京100049

出　　处：《原子能科学技术》2008年第B09期295-299,共5页Atomic Energy Science and Technology

基　　金：中国科学院“西部之光”联合学者项目;国家自然科学基金资助项目(10775161,10375079,10575125)

摘　　要：以厚度30μm的聚碳酸酯薄膜为母板,利用加速器提供的高能重离子对其进行辐照,辐照过的模板经紫外光敏化后置于蚀刻液中进行蚀刻以获得重离子径迹模板。采用电化学共沉积技术在重离子径迹模板中成功制备了InSb纳米线。通过扫描电子显微镜(SEM)对其形貌进行观察和分析,结合X射线衍射(XRD)研究沉积电位对InSb纳米成分的影响,最终获得了重离子径迹模板中制备InSb纳米线所需的最佳电化学沉积条件。The polycarbonate （PC） membranes with the thickness of 30 μm were irradiated with swift heavy ions provided by accelerator. Ion-track templates were obtained after illuminated by UV light and etched. The InSb nanowires were successfully prepared in the ion-track templates using electrochemical codeposition method. The morphology of as-prepared InSb nanowires was analyzed by scanning electron microscopy （SEM） and their structure was investigated by X-ray diffraction （XRD）. Finally, the optimum conditions for fabrication of InSb nanowires were proposed.

关 键 词：重离子径迹模板 电化学沉积 InSb纳米线 

分 类 号：O646.5[理学—物理化学] O649.4[理学—化学]