Growth and Characterization of a Kind of Nitrogen-Rich Niobium Nitride for Bolometer Applications at Terahertz Frequencies  

作　　者：鲁学会 康琳 周雷 陈健 吉争鸣 曹春海 金飚兵 许伟伟 吴培亨 王晓书 

机构地区：[1]Research Institute of Superconductor Electronics (RISE), Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093 [2]Center for Materials Analysis, Nanjing University, Nanjing 210093

出　　处：《Chinese Physics Letters》2008年第11期4076-4078,共3页中国物理快报（英文版）

摘　　要：Niobium is sputtered onto a single crystalline silicon substrate in N2：Ar=4：1 gas mixture at the total pressure of 2 Pa. The temperature coefficient of resistance of the sample is about 0.5% at 30OK, and up to 7% at 77K, indicating the possibility of using it to make room-temperature bolometers with performances better than those based on Pt, Bi, or Nb. For a 60-nm-thick sample, the rms surface roughness is 0.45nm over an area of 2 μm × 2 μm. Analyses based on x-ray diffraction and x-ray photoelectronic spectroscopy indicate that the samples are Nb5N6 thin films in which there is a combination of Nb^3＋ and Nb^5＋, or Nb^4＋.Niobium is sputtered onto a single crystalline silicon substrate in N2：Ar=4：1 gas mixture at the total pressure of 2 Pa. The temperature coefficient of resistance of the sample is about 0.5% at 30OK, and up to 7% at 77K, indicating the possibility of using it to make room-temperature bolometers with performances better than those based on Pt, Bi, or Nb. For a 60-nm-thick sample, the rms surface roughness is 0.45nm over an area of 2 μm × 2 μm. Analyses based on x-ray diffraction and x-ray photoelectronic spectroscopy indicate that the samples are Nb5N6 thin films in which there is a combination of Nb^3＋ and Nb^5＋, or Nb^4＋.

关 键 词：the power-law exponents PRECIPITATION durative abrupt precipitation change 

分 类 号：O55[理学—热学与物质分子运动论]