Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN  

Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN

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作  者:郝国栋 陈涌海 

机构地区:[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Box 912, Beijing 100083

出  处:《Chinese Physics Letters》2008年第11期4139-4142,共4页中国物理快报(英文版)

基  金:Supported by the National Basic Research Programme of China under Grant Nos 2006CB604908 and 2006CB921607, and the National Natural Science Foundation of China under Grant No 60625402.

摘  要:We investigate the uniaxial strain effect in the e-plane on optical properties of wurtzite GaN based on k.p theory, the spin-orbit interactions are also taken into account. The energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the kx - ky plane, which can reduce the density of states. The uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. We clarify the relations between the uniaxial strain and the optical polarization properties. As a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the efficient improvement of GaN-based laser performance.We investigate the uniaxial strain effect in the e-plane on optical properties of wurtzite GaN based on k.p theory, the spin-orbit interactions are also taken into account. The energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the kx - ky plane, which can reduce the density of states. The uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. We clarify the relations between the uniaxial strain and the optical polarization properties. As a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the efficient improvement of GaN-based laser performance.

关 键 词:the power-law exponents PRECIPITATION durative abrupt precipitation change 

分 类 号:O64[理学—物理化学]

 

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