The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots  

InAs/GaAs量子点光致发光光谱多峰结构发光本质(英文)

作　　者：梁志梅[1] 吴巨[1] 金鹏[1] 吕雪芹[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《Journal of Semiconductors》2008年第11期2121-2124,共4页半导体学报（英文版）

基　　金：the State Key Development Program for Basic Research of China(No.2006CB604904);the National Natural Science Foundation of China(Nos.60776037,60676029)~~

摘　　要：Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated. Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks. By combining experimental results and an energy-level structure analysis,origins of the multi-peaks are identified. Furthermore,inter-subband spacing of electrons and holes are deduced.研究了InAs/GaAs量子点光致发光光谱中出现的多峰结构.观察到随着激发功率的增加光谱中发光峰的数目逐渐增多并且部分发光峰的峰位随激发功率的增加向高能量方向移动.解释了各发光峰的来源并结合量子点能级结构的特点,计算了量子点中电子和空穴各子带间的能级间距.

关 键 词：quantum dots multi-peak structure energy-level structure PHOTOLUMINESCENCE 

分 类 号：TN304.23[电子电信—物理电子学]