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出 处:《Journal of Semiconductors》2008年第11期2180-2186,共7页半导体学报(英文版)
基 金:the State Key Development Program for Basic Research of China(No.2006CB300405)~~
摘 要:Effect of width ratio on the etching behaviour of joint channel structure is studied. By theory and experiments, the etching behaviors of joint channel with different width ratios are compared. The results show that the effect of width ratio on the etching behavior is much different for the narrow-wide joint channel and the wide-narrow structure. For the narrow-wide joint channel,the etching process depends not only on the width ratio but also on the width of the channel. The etching rate and concentration of etching front at each stage are very close with the same width ratio. The etching time required at each stage increases with the channel width, but the final total etching time is very close if the length of the wide channel is much longer. For the wide-narrow joint channel, the etching process depends only on the width ratio. For wide-narrow joint channel, the etching process, including the required etching time, is absolutely the same with the same width ratio. The etching rate and concentration of etching front at each stage increases with the rise of the width ratio, while the total etching time decreases with the increase of width ratio.对宽度比对组合沟道结构的牺牲层腐蚀特性的影响进行了研究.从理论和实验两个方面,对不同宽度比的腐蚀特性进行了比较.结果表明,宽度比对窄-宽组合结构和宽-窄组合结构的影响不同.对于窄-宽组合结构,腐蚀过程不仅与宽度比有关,而且与沟道宽度有关.对于宽度比相同的结构,每个阶段的腐蚀速率和腐蚀前端浓度非常接近,每个阶段的腐蚀时间却随沟道宽度的增加而增长.但是,如果宽沟道的长度比较长,总的腐蚀时间非常接近.对于宽-窄组合沟道结构,如果宽度比相同,则包括所需腐蚀时间在内的所有过程完全相同.每个阶段结束时的腐蚀速率和腐蚀前端的浓度随着宽度比的增大而增大,但是总的腐蚀时间随宽度比的增大而下降.
关 键 词:joint channel width ratio etching rate
分 类 号:TN405[电子电信—微电子学与固体电子学]
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