TbFeCo缓冲层对钴铁氧体薄膜的微观结构和磁性能影响  

EFFECTS OF TbFeCo UNDERLAYERS ON MICROSTRUCTURE AND MAGNETIC PROPERTY OF COBALT FERRITE THIN FILM

作　　者：金沈贤[1] 钟智勇[1] 唐晓莉[1] 荆玉兰[1] 张怀武[1] 

机构地区：[1]电子科技大学,电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《硅酸盐学报》2008年第11期1582-1585,共4页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(60490296,60671029,90306015);国防预研基金资助项目

摘　　要：采用射频磁控溅射技术在非晶TbFeCo缓冲层上制备了钴铁氧体(CoFe2O4)薄膜,并在空气中于300～1000℃退火。采用X射线衍射仪、振动样品磁强计对薄膜的微观结构和磁性能进行表征。研究表明:样品均以单相尖晶石结构存在,在300℃退火时具有(111)择优取向;而高于300℃退火时薄膜的(111)择优取向逐渐消失;在800℃以上退火时出现(400)择优取向。所有薄膜均具有高矫顽力和高垂直各向异性,800℃退火样品垂直于膜面方向具有最大矫顽力832×103A/m,矩形度为0.73,900℃退火时矩形度达0.9。Cobalt ferrite（CoFe2O4） thin films were deposited on amorphous TbFeCo underlayers using radio frequency magnetron sputtering. The prepared films were annealed at 300 to 1 000℃ in atmosphere. The microstructure and magnetic properties of the films were characterized by X-ray diffraction and vibrating sample magnetometry. The results show that all films are single phase with a spinel structure. The film annealed at 300℃ has a （111） preferred orientation, and the （111） preferred orientation disappears when the films are annealed at higher temperatures. Films annealed above 800℃ have a （400） preferred orientation. All films have high coercivity and high perpendicular anisotropy. The coercivity in the perpendicular direction to the film plane of the film annealed at 800℃ is as high as 832 × 10^3 A/m, and its remanence ratio is 0.73. The remanence ratio reaches 0.9 for film annealed at 900℃.

关 键 词：钴铁氧体 铽铁钴缓冲层 微观结构 磁性能 

分 类 号：TM271[一般工业技术—材料科学与工程]