RFID中EEPROM时序及控制电路设计  

RFID EEPROM Timing and Control Circuit Design

作　　者：程兆贤[1] 戴宇杰[1] 张小兴[1] 吕英杰[1] 樊勃[1] 

机构地区：[1]南开大学微电子所,天津300457

出　　处：《微纳电子技术》2008年第11期677-680,共4页Micronanoelectronic Technology

基　　金：天津市科技发展计划项目(05YFGZGX02300)

摘　　要：RFID系统对电子标签中的存储器有着不同于传统存储器的要求。根据这一特点进一步简化了EEPROM的时序控制,提出了一种适用于RFID系统中EEPROM电路的时序,并在此基础上设计了用于电子标签完成读卡器要执行的命令和对处理数据存储的控制电路,使操作变得更加便捷。该电路设计基于0.35μmCMOS工艺,电源电压为3.3V,仿真结果显示,3.3V电源供电时,擦写编程电流为45μA,读数据工作电流为3μA,读数据周期为300ns,具有低功耗、高速度的特性。Memory requirements in RFID tags are different from the traditional memory. A novel RFID EEPROM timing design and corresponding control circuit were presented. The circuit was used for RFID reader to complete the implementation of the orders and handling of data storage. Moreover, the special characteristics of RFID systems was considered. These well-conceived circuits make the operation easy and quick. The circuits are based on 0.35 μm CMOS process, and operate at a single 3.3 V power supply with low power and high speed. The simulation results show that the current consumption to erase and write is 45μA, reading current consump- tion is 3μA, reading data rate is 300 ns at 3.3 V power supply.

关 键 词：射频识别卡 电可擦可编程只读存储器 时序 控制电路 模拟仿真 

分 类 号：TN492[电子电信—微电子学与固体电子学] TN402