利用硅光电池测量硅单晶半导体材料的禁带宽度  

Measuring the band gap of silicon using silicon photocells

作　　者：唐爽[1] 岑剡[1] 

机构地区：[1]复旦大学物理学系,上海200433

出　　处：《物理实验》2008年第11期6-8,共3页Physics Experimentation

摘　　要：以白炽灯为光源照射单晶硅光电池,测量在硅光电池前加不同截止波长的滤色片时的短路电流.通过短路电流和截止波长的关系,经拟合得到单晶硅材料的长波限,再利用半导体材料的长波限与半导体的禁带宽度Eg的关系,即Eg=hc/λ,计算得出其禁带宽度.The crystalline silicon photocell is illuminated by an incandescent lamp, and the shortcircuit current of the photocell is detected when filters of different cut-off wavelength are put in front of it. Consequently, the long wavelength limit via the relation between short-circuit current and cut- off wavelength is calculated, then the band gap of silicon （1.13 eV） is given according to the equation Eg =hc/λ.

关 键 词：硅光电池 短路电流 截止波长 禁带宽度 

分 类 号：TM914.41[电气工程—电力电子与电力传动]