喷雾热解法制备掺锑二氧化锡薄膜及其性能表征  

Preparation and characterization of SnO_2∶Sb thin films by spray pyrolysis process

作　　者：侯环宇[1] 王正德[2] 李保卫 

机构地区：[1]内蒙古科技大学材料与冶金学院,内蒙古包头014010 [2]内蒙古科技大学生物与化学工程学院,内蒙古包头014010

出　　处：《内蒙古科技大学学报》2008年第2期137-139,共3页Journal of Inner Mongolia University of Science and Technology

摘　　要：用喷雾热解法将掺杂锑的氯化亚锡溶液喷射到预先加热的玻璃管衬底上,制备了掺锑氧化锡透明导电薄膜.采用X射线衍射仪和扫描电镜分别对薄膜的结构和表面形貌进行了表征.研究了不同掺锑量对薄膜点电阻的影响及在可见光范围内与透光率之间的关系.结果表明,掺杂锑的薄膜呈四方金红石结构,薄膜比较致密,进行掺杂后的薄膜电阻变小,当锑锡原子比为0.04时点电阻最小,约为28Ω/cm.镀膜玻璃管在可见光范围内透光率随锑掺杂量增多而减小.SnO2 ： Sb thin films were prepared by spray pyrolysis on the glass tube substrate. The thin films were characterized by X-ray diffraction （XRD） and scanning electron microscopy （SEM） . The result shows that the SnO2：Sh thin films have tetrahedral rutile structure with a lower resistance value .The lowest resistance（about 28 Ω/cm）was obtained when the atom ratio of Sb to Sn is 0.04 .The transmittance level in the visual region decreases with the increase of the Sb-doping concentration.

关 键 词：喷雾热解法 SNO2 Sb薄膜 光电性能 

分 类 号：TB43[一般工业技术]