半导体探测器在秦山第二核电厂辐射监测系统上的应用  

The application of semiconductor detector at the radiation monitoring system of the NPQJVC

作　　者：刘正山[1] 杜向阳[1] 胡验军[1] 苗宇星[1] 彭阳[1] 刘晋瑾[1] 黄鸿 李冬馀 申启明 张强 贾育新 

机构地区：[1]中国辐射防护研究院,山西太原030006 [2]核电秦山联营有限公司安防处,浙江海盐314300 [3]广东省职业病防治所,广东广州510310

出　　处：《核电子学与探测技术》2008年第5期898-901,共4页Nuclear Electronics & Detection Technology

摘　　要：对在秦山第二核电厂辐射监测系统中使用的两种半导体探测器PIPS(Planar Implanted Passivated Silicon)和SIR的原理、结构、三种应用方式、使用情况进行了介绍和初步研究。The principle, construction and three ways of application of the two kinds of semiconductors PIPS and SIR which are used at the Qinshan the second nuclear power station has been described in this paper. Summaryed and analyzed the engineering use of these kinds of detector.

关 键 词：PIPS探测器 SIR探测器 辐射监测系统 

分 类 号：TL811[核科学技术—核技术及应用]