MnSi_(1.7)半导体薄膜材料研究进展  

Latest Development of MnSi_(1.7) Semiconducting Films

作　　者：赵伟[1] 侯清润[1] 陈宜保[1] 何元金[1] 

机构地区：[1]清华大学物理系,北京100084

出　　处：《真空科学与技术学报》2008年第6期539-546,共8页Chinese Journal of Vacuum Science and Technology

摘　　要：本文对近年来MnSi1.7半导体薄膜的制备方法和电学性能进行了综述。与PtSi和Bi1-xSbx薄膜制备的红外探测器相比较,用MnSi1.7半导体薄膜制备的红外探测器有诸多优点。另外,MnSi1.7半导体薄膜还可以用于制造微型温差发电器件。掺杂及制备纳米尺寸的薄膜是改善其电学性能的两个方法。通过对薄膜进行掺杂,可以获得p型和n型薄膜,薄膜的电阻率明显下降;将薄膜厚度减小到14nm后,塞贝克系数在483K时可达-967μV.K-1。The latest progress in the growth technologies and properties characterization of the MnSi1.7 semi-conducting films was reviewed. MnSi1.7 semiconducting film could be a promising material in fabricating optical devices, including infrared detectors, miniaturized thermo-electric generators etc. Discussions focused on the technical advantages of the infrared detectors made of MnSi1.7 semi-conducting films over those of the conventional ones, such as the PtSi and Bi1-Sxbx detectors. The technologies of impurity doping and of nanostructures fabrication were also discussed. The p-type and n-type MnSi1.7 films with low resistivity can be obtained by doping of different impurities. Besides, after the films thitmed to 14nm, the Seebeck coefficient reaches -967μV·K^-1 at a temperature of 483K.

关 键 词：MnSi1.7半导体薄膜 温差发电 综述 红外探测器 掺杂 纳米尺寸 

分 类 号：TN304.05[电子电信—物理电子学] TM304.2[电气工程—电机]