Low Noise Distributed Amplifiers Using a Novel Composite-Channel GaN HEMTs  

一种采用新型复合沟道GaN HEMTs低噪声分布式放大器(英文)

作　　者：程知群[1] 周肖鹏[1] 陈敬[2] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,杭州310018 [2]香港科技大学电子与计算机工程系

出　　处：《Journal of Semiconductors》2008年第12期2297-2300,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.60776052)~~

摘　　要：Low noise distributed amplifiers （DAs） using the novel low noise composite-channel Al0.3 Ga0.7N/ml0.05 Ga0.95 N/ GaN HEMTs （CC-HEMTs） with 1μm-gate-length are designed and fabricated. Simulated and measured results of the DAs are characterized. The measured results show that the low noise DAs have input and output VSWR （voltage standing wave ratio） of less than 2.0,associated gain of more than 7.0dB and gain ripple of less than ldB in the frequency range from 2 to 10GHz. Noise figure of the DAs is less than 5dB in the frequency range from 2 to 6GHz,and less than 6.5dB in the frequency range from 2 to 10GHz. The measured results agree well with the simulated ones.设计研制了一种新型的低噪声分布式放大器，采用了栅长为1μm的低噪声复合沟道Al0.3Ga0.7N／Al0.05Ga0.95N／GaNHEMT（CC-HEMT）。给出了低噪声分布式放大器的仿真和测试结果。测试结果显示低噪声分布式放大器在2～10GHz频率范围内，输入和输出端口驻波比均小于2．0，相关增益大于7．0dB，带内增益波纹小于1dB．在2～6GHz频率范围内，噪声系数小于5dB；在2～10GHz频率范围内，噪声系数小于6．5dB；测试结果与仿真结果较吻合。

关 键 词：low noise distributed amplifiers composite-channel GaN HEMTs 

分 类 号：TN722[电子电信—电路与系统]