Sampled Grating DBR Lasers with 35nm Quasi-Continuous Tuning Range  

准连续调谐35nm的SGDBR激光器的研制(英文)

作　　者：张瑞康[1] 董雷[1,2] 王定理[1,3] 张靖[1] 陈磊[1] 江山[1] 余永林[4] 

机构地区：[1]武汉邮电科学研究院,武汉430074 [2]山东大学信息科学与工程学院,济南250100 [3]武汉大学物理科学与技术学院声光材料与器件教育部重点实验室,武汉430072 [4]华中科技大学武汉光电国家实验室,武汉430074

出　　处：《Journal of Semiconductors》2008年第12期2301-2303,共3页半导体学报（英文版）

基　　金：supported by the National High Technology Research and Development Programof China(No.2006AA03Z427);the State Key Development Programfor Basic Research of China(No.2003CB314903);the National Natural Science Foundation of China(No.60677024)~~

摘　　要：We demonstrate a ridge waveguide sampled-grating distributed-feedback laser with quasi-continuous wavelength coverage over a 35nm range. The design is based on a 320nm-thick butt jointed passive waveguide optimized for carrier injection tuning. The butt-joint technology enable optimize the passive waveguide as well as active section. By tuning mirror sections,the laser provides 35nm tuning while maintaining 〉30dB sidemode suppression ratio.对接生长技术可以独立优化不同区域的波导结构,有利于制作高性能的半导体光电子集成器件.文中采用MOCVD对接生长技术制作了SGDBR激光器,通过载流子注入,器件准连续调谐范围为35nm,在调谐范围内边模抑制比大于30dB.

关 键 词：SGDBR diode laser tunable laser butt-joint regrowth 

分 类 号：TN248.4[电子电信—物理电子学]