垂直腔面发射激光器中氧化速率规律的研究  

Rule of Oxidation Rate in Vertical Cavity Surface Emitting Lasers

作　　者：冯源[1] 钟景昌[1] 郝永芹[1] 赵英杰[1] 侯立峰[1] 么艳萍[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《Journal of Semiconductors》2008年第12期2412-2416,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60676059;60676026);武器装备预研基金;吉林省科技发展计划(批准号:20080331)资助项目~~

摘　　要：本文在不同条件下进行了选择性氧化实验,从中获得被氧化样品的微观结构图片和不同氧化深度处的各组分含量.由于氧化速率主要受扩散控制的影响,因而本研究运用扩散动力学方法对实验结果进行分析.所推导出氧化规律的数学拟合曲线与实验所得数据基本吻合,从而得出垂直腔面发射激光器氧化剂浓度随氧化深度的增加呈现指数衰减的规律.This research is based on the selective oxidation experiments under different conditions,in which the microstructure pictures and the component contents of the produced oxide in different depths are obtained. The oxidation rate is mainly controlled by diffusion;therefore,the experimental results are analyzed with the kinetics of thermal diffusion. It shows that the results of mathematical derivation are basically in agreement with the experimental results. Thus it is concluded that the concentration of oxidant is exponentially declined as the depth of oxidation in vertical cavity surface emitting lasers increases.

关 键 词：垂直腔面发射激光器 选择性氧化 氧化速率 扩散速率 

分 类 号：TN248.4[电子电信—物理电子学]